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| HWF1686YC L-Band Power FET Via Hole Chip Autumn 2002 V1 Features Output Power: P1dB=30dBm(typ.) High Gain: GL=16dB(typ.) High Efficiency: PAE=45%(typ.) High Linearity: IP3=45dBm(typ.) Outline Dimensions 650 Description Designed for various RF and Microwave applications, the HWF1686YC is a medium power GaAs MESFET chip with 2 mm gate width and 0.7 m gate length. Unit : m Thickness: 535 All Bond Pads: 60 x 60 Absolute Maximum Ratings VDS VGS ID IG TCH TSTG PT * Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation +15V -5V IDSS 2mA 175C -65 to +175C 5.4W 0 .0 0 .0 5 8 .5 * mounted on an infinite heat sink Electrical Specifications (TA=25C) Symbol IDSS VP Parameters Saturated Drain Current Pinch-off Voltage Transconductance Thermal Resistance Output Power @1dB Gain Linear Power Gain Power-added Efficiency (Pout = P1dB) Third-order Intercept Point * VDS=3V, VGS=0V VDS=3V, IDS=20mA VDS=3V, IDS=200mA Channel to Case VDS=10V IDS=0.5IDSS f=2.4GHz gm Rth P1dB GL PAE IP3 *: Single carrier level 15dBm, 1 MHz apart between 2 tones, current adjusted for best IP3 Bonding Manner Gate, drain, pad: 1 wire on each pad Source pad: 2 wires on each side Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. S o u rce 435 1 3 215 2 4 S o u rce 3 4 4 .5 400 Bond Pads: 1 to 2: Gate 3 to 4: Drain Source electrodes are connected to the bottom of the chip by via-holes Conditions Units mA V mS C/W dBm dB % dBm Min. 300 -3.5 29.0 15 - Typ. 400 -2.0 200 20 30.0 16 45 45 Max. 600 -1.5 28 - HWF1686YC L-Band Power FET Via Hole Chip Autumn 2002 V1 Typical Performance (TA=25C) Output Power, Efficiency & Gain vs. Input Power VDS=10V, IDS=0.5IDSS f=2.4GHz 40 35 50 add 40 Pout (dBm) 30 25 20 Gain (dB) 15 10 20 10 5 0 0 2 4 6 8 10 12 14 16 18 20 0 Power Derating Curve 6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200 Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. add Pout 30 (%) HWF1686YC L-Band Power FET Via Hole Chip Autumn 2002 V1 S-Parameters (Common Source, TA=25C, VDS=10V, IDS=0.5IDSS) Freq (GHz) 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 S11 Mag. 0.954 0.951 0.961 0.948 0.952 0.935 0.919 0.923 0.912 0.910 0.906 0.897 0.895 0.891 0.890 0.885 0.881 0.882 0.877 0.875 0.872 0.872 0.871 0.868 0.868 0.866 0.864 0.868 0.875 0.885 0.893 0.900 0.906 S21 Ang. Mag. 7.226 6.984 6.840 6.627 6.439 6.249 6.062 5.877 5.683 5.500 5.323 5.155 4.985 4.828 4.675 4.527 4.377 4.247 4.127 4.004 3.884 3.770 3.667 3.563 3.468 3.376 2.637 2.131 1.762 1.482 1.256 1.076 0.929 S12 Ang. Mag. 0.014 0.017 0.019 0.021 0.022 0.024 0.026 0.027 0.028 0.029 0.030 0.032 0.032 0.033 0.033 0.034 0.034 0.035 0.035 0.035 0.035 0.036 0.036 0.036 0.036 0.036 0.035 0.034 0.034 0.035 0.037 0.039 0.042 S22 Ang. Mag. 0.447 0.437 0.429 0.419 0.413 0.410 0.402 0.396 0.392 0.386 0.384 0.382 0.376 0.372 0.369 0.368 0.363 0.363 0.361 0.359 0.356 0.354 0.354 0.352 0.354 0.351 0.360 0.387 0.429 0.479 0.533 0.587 0.632 Ang. -19.70 -18.31 -21.07 -21.92 -23.65 -25.63 -27.73 -29.80 -32.16 -33.77 -35.69 -37.44 -39.23 -40.59 -42.16 -43.84 -45.32 -47.31 -48.47 -50.11 -51.75 -53.12 -54.99 -56.45 -58.18 -59.75 -76.06 -91.99 -106.97 -120.20 -131.61 -141.27 -149.91 -34.67 -43.74 -49.94 -56.83 -62.89 -68.75 -74.49 -79.55 -84.11 -88.83 -93.24 -97.51 -101.56 -105.51 -109.19 -112.59 -115.71 -119.35 -122.09 -124.98 -127.84 -130.32 -132.93 -135.21 -137.65 -139.91 -158.30 -171.82 177.44 168.64 161.14 154.58 148.43 155.21 150.54 146.64 142.25 138.64 134.81 130.93 127.63 124.29 121.14 118.15 115.23 112.39 109.72 107.11 104.59 102.10 99.79 97.46 95.30 93.16 91.12 88.97 87.05 85.04 83.18 65.91 50.92 37.01 24.35 12.37 1.23 -9.39 69.81 67.23 64.68 61.63 58.12 56.88 53.94 51.75 49.51 47.65 45.96 44.48 42.75 40.58 39.47 38.99 37.41 36.06 35.40 34.21 33.53 32.95 32.08 31.42 30.69 30.10 28.12 29.66 33.69 37.70 40.81 41.73 40.54 Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. |
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